FCP190N60E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

20.6A Tc

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Length :

10.67mm

Terminal Finish :

Tin (Sn)

Number of Pins :

3

JESD-609 Code :

e3

Power Dissipation :

208W

Published :

2017

Continuous Drain Current (ID) :

20.6A

Packaging :

Tube

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

2.5V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Mounting Type :

Through Hole

Series :

SuperFET® II

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

16.51mm

Power Dissipation-Max :

208W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3175pF @ 25V

Weight :

1.8g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

101 ns

Width :

4.83mm

Number of Elements :

1

Package / Case :

TO-220-3

Factory Lead Time :

14 Weeks

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Fall Time (Typ) :

15 ns

Pbfree Code :

yes

Turn On Delay Time :

23 ns

Rise Time :

14ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free