FCP11N60F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2005

Packaging :

Tube

Drain to Source Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Pins :

3

REACH SVHC :

No SVHC

Power Dissipation-Max :

125W Tc

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

600V

Height :

9.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

SuperFET™

Turn-Off Delay Time :

119 ns

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Turn On Delay Time :

34 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Nominal Vgs :

5 V

Vgs (Max) :

±30V

Number of Terminations :

3

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Width :

4.7mm

Dual Supply Voltage :

600V

Weight :

1.8g

Rise Time :

98ns

Termination :

Through Hole

Length :

10.1mm

Input Capacitance (Ciss) (Max) @ Vds :

1490pF @ 25V

Power Dissipation :

125W

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Threshold Voltage :

5V

Quiescent Current :

100μA

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Resistance :

380mOhm

Continuous Drain Current (ID) :

11A

Fall Time (Typ) :

56 ns

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Current Rating :

11A