FCP170N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Transistor Element Material :

SILICON

Mount :

Through Hole

Weight :

1.8g

Continuous Drain Current (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Power Dissipation-Max :

227W Tc

JESD-609 Code :

e3

Turn On Delay Time :

21 ns

Rise Time :

12ns

Avalanche Energy Rating (Eas) :

525 mJ

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 380V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Turn-Off Delay Time :

55 ns

Resistance :

170mOhm

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Fall Time (Typ) :

3.8 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

170m Ω @ 11A, 10V

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Number of Elements :

1

Drain to Source Breakdown Voltage :

600V

Pbfree Code :

yes

Series :

SuperFET® II

Pulsed Drain Current-Max (IDM) :

66A

Number of Terminations :

3