FCP16N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2170pF @ 100V

Height :

9.4mm

Packaging :

Tube

Length :

10.67mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

16A

Power Dissipation :

134.4W

Published :

2009

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Threshold Voltage :

2V

Gate Charge (Qg) (Max) @ Vgs :

52.3nC @ 10V

Turn-Off Delay Time :

60.3 ns

Rds On (Max) @ Id, Vgs :

199m Ω @ 8A, 10V

Element Configuration :

Single

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

2 V

ECCN Code :

EAR99

Number of Elements :

1

Turn On Delay Time :

15.8 ns

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

Power Dissipation-Max :

134.4W Tc

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

12 Weeks

Series :

SupreMOS™

Resistance :

199mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.83mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

15.5ns

Vgs (Max) :

±30V

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

48A

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

20.2 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Weight :

1.8g