FCP13N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

39.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Drain-source On Resistance-Max :

0.258Ohm

Length :

10.67mm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

116W Tc

Weight :

1.8g

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tube

Series :

SupreMOS™

Fall Time (Typ) :

9.8 ns

Power Dissipation :

116W

Continuous Drain Current (ID) :

13A

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Mounting Type :

Through Hole

JESD-609 Code :

e3

Turn-Off Delay Time :

45 ns

Element Configuration :

Single

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

258m Ω @ 6.5A, 10V

Number of Pins :

3

Threshold Voltage :

2V

Height :

9.4mm

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Rise Time :

10.6ns

FET Type :

N-Channel

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

1765pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.83mm

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

14.5 ns

Factory Lead Time :

14 Weeks

Pbfree Code :

yes