FCH47N60N
- Mfr.Part #
- FCH47N60N
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247-3
- Stock
- 11,861
- In Stock :
- 11,861
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 3V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Width :
- 4.82mm
- Length :
- 15.87mm
- Weight :
- 6.39g
- Turn-Off Delay Time :
- 117 ns
- Height :
- 20.82mm
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 45.8A
- Series :
- SupreMOS™
- Power Dissipation-Max :
- 368W Tc
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 23.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 368W
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-247AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Published :
- 2013
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 4 ns
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 34 ns
- Current - Continuous Drain (Id) @ 25°C :
- 45.8A Tc
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Drain-source On Resistance-Max :
- 0.065Ohm
- Mount :
- Through Hole
- Rise Time :
- 22ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 100V
- Gate to Source Voltage (Vgs) :
- 30V
- Avalanche Energy Rating (Eas) :
- 2926 mJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Base Part Number :
- FCH47N60
- Datasheets
- FCH47N60N

N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3
FCH47N60NF Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.
FCH47N60NF Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 57.5 m
-
Ultra Low Gate Charge (Typ. Qg = 240 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH47N60NF Applications
-
Solar Inverter
-
AC?DC Power Supply
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCH47N60 | onsemi | 10,782 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60 | onsemi | 17,552 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F085 | onsemi | 6,513 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F133 | onsemi | 1,679 | MOSFET N-CH 600V 47A TO-247 |
| FCH47N60F | onsemi | 5,058 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F085 | onsemi | 16,164 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F133 | onsemi | 8,218 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60NF | onsemi | 5,336 | MOSFET N-CH 600V 45.8A TO247-3 |
















