FCH47N60N

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Mfr.Part #
FCH47N60N
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 47A TO247-3
Stock
11,861
In Stock :
11,861

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Threshold Voltage :
3V
Pbfree Code :
yes
ECCN Code :
EAR99
Width :
4.82mm
Length :
15.87mm
Weight :
6.39g
Turn-Off Delay Time :
117 ns
Height :
20.82mm
Radiation Hardening :
No
Continuous Drain Current (ID) :
45.8A
Series :
SupreMOS™
Power Dissipation-Max :
368W Tc
Factory Lead Time :
15 Weeks
Package / Case :
TO-247-3
Rds On (Max) @ Id, Vgs :
65m Ω @ 23.5A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Vgs (Max) :
±30V
Power Dissipation :
368W
Element Configuration :
Single
JEDEC-95 Code :
TO-247AB
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Published :
2013
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 23 hours ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
4 ns
FET Type :
N-Channel
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Turn On Delay Time :
34 ns
Current - Continuous Drain (Id) @ 25°C :
45.8A Tc
Drain to Source Breakdown Voltage :
600V
Packaging :
Tube
REACH SVHC :
No SVHC
Drain-source On Resistance-Max :
0.065Ohm
Mount :
Through Hole
Rise Time :
22ns
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
6120pF @ 100V
Gate to Source Voltage (Vgs) :
30V
Avalanche Energy Rating (Eas) :
2926 mJ
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Base Part Number :
FCH47N60
Datasheets
FCH47N60N
Introducing Transistors - FETs, MOSFETs - Single onsemi FCH47N60N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:FCH47N60, FCH47N60N pinout, FCH47N60N datasheet PDF, FCH47N60N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCH47N60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCH47N60N


N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3

FCH47N60NF Description


The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.



FCH47N60NF Features


  • 650 V @ TJ = 150°C

  • Typ. RDS(on) = 57.5 m

  • Ultra Low Gate Charge (Typ. Qg = 240 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)

  • 100% Avalanche Tested

  • This Device is Pb?Free and is RoHS Compliant



FCH47N60NF Applications


  • Solar Inverter

  • AC?DC Power Supply


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