FCH47N60
- Mfr.Part #
- FCH47N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247-3
- Stock
- 10,782
- In Stock :
- 10,782
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Rise Time :
- 22ns
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 2926 mJ
- Number of Terminations :
- 3
- Power Dissipation :
- 368W
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Height :
- 20.82mm
- Threshold Voltage :
- 3V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-247AB
- JESD-609 Code :
- e3
- Published :
- 2013
- Weight :
- 6.39g
- ECCN Code :
- EAR99
- Base Part Number :
- FCH47N60
- Turn-Off Delay Time :
- 117 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 100V
- Package / Case :
- TO-247-3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Continuous Drain Current (ID) :
- 45.8A
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- SupreMOS™
- Length :
- 15.87mm
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Turn On Delay Time :
- 34 ns
- Fall Time (Typ) :
- 4 ns
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 368W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 45.8A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.82mm
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Drain-source On Resistance-Max :
- 0.065Ohm
- Drain to Source Breakdown Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 23.5A, 10V
- Datasheets
- FCH47N60

N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3
FCH47N60NF Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.
FCH47N60NF Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 57.5 m
-
Ultra Low Gate Charge (Typ. Qg = 240 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH47N60NF Applications
-
Solar Inverter
-
AC?DC Power Supply
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