FCH190N65F-F155
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- Mfr.Part #
- FCH190N65F-F155
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 20.6A TO247
- Stock
- 33,950
- In Stock ：
- 33,950
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 400 mJ
- DS Breakdown Voltage-Min :
- 650V
- JEDEC-95 Code :
- TO-247AB
- Weight :
- 6.39g
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 62 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 4.2 ns
- Continuous Drain Current (ID) :
- 20.6A
- Resistance :
- 190mOhm
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3225pF @ 100V
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20.6A Tc
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 5V @ 2mA
- Rise Time :
- 11ns
- Packaging :
- Tube
- Series :
- FRFET®, SuperFET® II
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Turn On Delay Time :
- 25 ns
- Power Dissipation-Max :
- 208W Tc
- Drain to Source Voltage (Vdss) :
- 650V
- Datasheets
- FCH190N65F-F155
N-Channel Tube 190m Ω @ 10A, 10V ±20V 3225pF @ 100V 78nC @ 10V 650V TO-247-3
FCH190N65F-F155 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3225pF @ 100V.This device conducts a continuous drain current (ID) of 20.6A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 650V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FCH190N65F-F155 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 20.6A
the turn-off delay time is 62 ns
a 650V drain to source voltage (Vdss)
FCH190N65F-F155 Applications
There are a lot of ON Semiconductor
FCH190N65F-F155 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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