FCH130N60
- Mfr.Part #
- FCH130N60
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 28A TO247-3
- Stock
- 211
- In Stock :
- 211
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Width :
- 4.82mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 14A, 10V
- Series :
- SuperFET® II
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 65 ns
- Published :
- 2017
- Number of Channels :
- 1
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 12 Weeks
- Mount :
- Through Hole
- Turn On Delay Time :
- 25 ns
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Length :
- 15.87mm
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 720 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-247AB
- Pulsed Drain Current-Max (IDM) :
- 84A
- Vgs (Max) :
- ±20V
- Rise Time :
- 16ns
- Weight :
- 6.39g
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 20.82mm
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Power Dissipation-Max :
- 278W Tc
- Fall Time (Typ) :
- 4 ns
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 28A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3590pF @ 380V
- Mounting Type :
- Through Hole
- Datasheets
- FCH130N60

N-Channel Tube 130m Ω @ 14A, 10V ±20V 3590pF @ 380V 70nC @ 10V TO-247-3
FCH130N60 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 720 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3590pF @ 380V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 84A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FCH130N60 Features
the avalanche energy rating (Eas) is 720 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 84A.
FCH130N60 Applications
There are a lot of ON Semiconductor
FCH130N60 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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