FCD9N60NTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pbfree Code :

yes

Length :

6.73mm

Width :

6.22mm

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Power Dissipation-Max :

92.6W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Weight :

260.37mg

Number of Pins :

3

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

27A

Height :

2.39mm

Threshold Voltage :

3V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2004

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Base Part Number :

FCD9N60

Number of Terminations :

2

ECCN Code :

EAR99

Rise Time :

9.6ns

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

9A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

9A

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Case Connection :

DRAIN

Series :

SupreMOS™

Element Configuration :

Single

Fall Time (Typ) :

11.5 ns

Qualification Status :

Not Qualified

Turn On Delay Time :

12.7 ns

Power Dissipation :

92.6W

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 100V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

385m Ω @ 4.5A, 10V

Turn-Off Delay Time :

28.7 ns