FCD900N60Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.3A, 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

650V

Turn On Delay Time :

10.9 ns

Number of Pins :

3

ECCN Code :

EAR99

Rise Time :

5.2ns

Series :

SuperFET® II

Continuous Drain Current (ID) :

4.5A

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.9Ohm

Vgs (Max) :

±20V

Height :

6.22mm

Fall Time (Typ) :

11.9 ns

Length :

6.73mm

Published :

2013

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Weight :

260.37mg

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

2W

FET Type :

N-Channel

Turn-Off Delay Time :

33.6 ns

Avalanche Energy Rating (Eas) :

47.5 mJ

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 25V

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Width :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Base Part Number :

FCD900N60

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

52W Tc