FCD7N60TM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Fall Time (Typ) :

32 ns

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

JEDEC-95 Code :

TO-252AA

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Rise Time :

55ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

75 ns

JESD-30 Code :

R-PSSO-G2

Series :

SuperFET™

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Resistance :

600mOhm

Pbfree Code :

yes

Turn On Delay Time :

35 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

7A

Mounting Type :

Surface Mount

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Packaging :

Tape and Reel (TR)

Weight :

260.37mg

Terminal Form :

Gull wing

Number of Elements :

1

Base Part Number :

FCD7N60

Power Dissipation :

83W

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

FET Type :

N-Channel

Radiation Hardening :

No

Power Dissipation-Max :

83W Tc