FCD7N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

35 ns

Number of Elements :

1

JESD-609 Code :

e3

Continuous Drain Current (ID) :

7A

Pbfree Code :

yes

Fall Time (Typ) :

32 ns

JESD-30 Code :

R-PSSO-G2

Dual Supply Voltage :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

55ns

Terminal Form :

Gull wing

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Resistance :

600mOhm

Contact Plating :

Tin

Nominal Vgs :

5 V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Number of Terminations :

2

Voltage - Rated DC :

600V

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

7A

Termination :

SMD/SMT

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

75 ns

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Series :

SuperFET™

Length :

6.73mm

REACH SVHC :

No SVHC

Width :

6.22mm

Factory Lead Time :

12 Weeks

Weight :

260.37mg

Current Rating :

7A

Base Part Number :

FCD7N60

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Power Dissipation-Max :

83W Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Power Dissipation :

83W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Height :

2.39mm