FCD5N60TM

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Mfr.Part #
FCD5N60TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 4.6A DPAK
Stock
1,024
In Stock :
1,024

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
54W
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 25V
Length :
6.73mm
ECCN Code :
EAR99
Fall Time (Typ) :
22 ns
Terminal Form :
Gull wing
Lead Free :
Lead Free
Turn On Delay Time :
12 ns
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
JESD-30 Code :
R-PSSO-G2
Rise Time :
40ns
Series :
SuperFET™
Voltage - Rated DC :
600V
Base Part Number :
FCD5N60
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
54W Tc
Case Connection :
DRAIN
Published :
2014
Width :
6.22mm
Terminal Finish :
Tin (Sn)
Resistance :
950mOhm
Vgs(th) (Max) @ Id :
5V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Radiation Hardening :
No
Weight :
260.37mg
Operating Mode :
ENHANCEMENT MODE
REACH SVHC :
No SVHC
Number of Terminations :
2
Number of Pins :
3
Turn-Off Delay Time :
47 ns
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Height :
2.39mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs :
950m Ω @ 2.3A, 10V
Drain to Source Breakdown Voltage :
600V
Transistor Element Material :
SILICON
Factory Lead Time :
14 Weeks
Current - Continuous Drain (Id) @ 25°C :
4.6A Tc
Pbfree Code :
yes
Threshold Voltage :
5V
Element Configuration :
Single
Mount :
Surface Mount
Current Rating :
4.6A
Number of Elements :
1
Continuous Drain Current (ID) :
4.6A
Datasheets
FCD5N60TM
Introducing Transistors - FETs, MOSFETs - Single onsemi FCD5N60TM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:FCD5N60, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FCD5N60TM pinout, FCD5N60TM datasheet PDF, FCD5N60TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCD5N60TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCD5N60TM


N-Channel Tape & Reel (TR) 950m Ω @ 2.3A, 10V ±30V 600pF @ 25V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FCD5N60TM   Description


  Super   FETMOSFET is the first generation of high voltage superjunction (SJ) MOSFET in Xiantong semiconductor family. It uses charge balance technology to obtain excellent low on-resistance and low gate charge performance. The technology aims to minimize the turn-on loss and provide excellent switching performance. Therefore, SuperFET MOSFET is very suitable for switching power applications such as PFC, server / telecom power supply, flat screen TV power supply, ATX power supply and industrial power supply.

 

FCD5N60TM    Features


650V@T=150°C·Typ.RDs(on)=810 mΩ

.Ultra Low Gate Charge(Typ.Q=16nC)

·Low Effective Output Capacitance(Typ.Coss(e.)=32pF)

100% Avalanche Tested RoHS Compliant

 

FCD5N60TM    Application


LCD/LED TV and Monitor Lighting

Solar Inverter

AC-DC Power Supply



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