FCD5N60TM
- Mfr.Part #
- FCD5N60TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER MOSFET, N-CHANNEL, SUPERFE
- Stock
- 1,024
- In Stock :
- 1,024
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Turn On Delay Time :
- 12 ns
- Turn-Off Delay Time :
- 47 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 54W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2014
- Drain to Source Breakdown Voltage :
- 600V
- Weight :
- 260.37mg
- Height :
- 2.39mm
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±30V
- Length :
- 6.73mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Power Dissipation :
- 54W
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- SuperFET™
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 5V
- Continuous Drain Current (ID) :
- 4.6A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 2.3A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 4.6A
- Resistance :
- 950mOhm
- Rise Time :
- 40ns
- Mounting Type :
- Surface Mount
- Base Part Number :
- FCD5N60
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 14 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Tc
- Width :
- 6.22mm
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 22 ns
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Datasheets
- FCD5N60TM

N-Channel Tape & Reel (TR) 950m Ω @ 2.3A, 10V ±30V 600pF @ 25V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FCD5N60TM Description
Super FETMOSFET is the first generation of high voltage superjunction (SJ) MOSFET in Xiantong semiconductor family. It uses charge balance technology to obtain excellent low on-resistance and low gate charge performance. The technology aims to minimize the turn-on loss and provide excellent switching performance. Therefore, SuperFET MOSFET is very suitable for switching power applications such as PFC, server / telecom power supply, flat screen TV power supply, ATX power supply and industrial power supply.
FCD5N60TM Features
650V@T=150°C·Typ.RDs(on)=810 mΩ
.Ultra Low Gate Charge(Typ.Q=16nC)
·Low Effective Output Capacitance(Typ.Coss(e.)=32pF)
100% Avalanche Tested RoHS Compliant
FCD5N60TM Application
LCD/LED TV and Monitor Lighting
Solar Inverter
AC-DC Power Supply
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCD5N60-F085 | onsemi | 39,932 | FCD5N60_F085 - N-CHANNEL SUPERFE |
| FCD5N60-F085 | onsemi | 39,932 | MOSFET N-CH 600V 4.6A DPAK |
| FCD5N60TF | onsemi | 2,890 | MOSFET N-CH 600V 4.6A DPAK |
| FCD5N60TM | onsemi | 1,024 | MOSFET N-CH 600V 4.6A DPAK |
| FCD5N60TM-WS | onsemi | 1,650 | MOSFET N-CH 600V 4.6A DPAK |
















