FCB199N65S3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1225pF @ 400V

Case Connection :

DRAIN

Mount :

Surface Mount

Number of Elements :

1

Number of Terminations :

2

FET Type :

N-Channel

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

98W Tc

Peak Reflow Temperature (Cel) :

245

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

650V

Drain-source On Resistance-Max :

0.199Ohm

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

14A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DS Breakdown Voltage-Min :

650V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

199m Ω @ 7A, 10V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

76 mJ

Series :

SuperFET® III

Pulsed Drain Current-Max (IDM) :

35A

Vgs(th) (Max) @ Id :

4.5V @ 1.4mA

Weight :

1.31247g

RoHS Status :

RoHS Compliant