FCB110N65F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

650V

Number of Elements :

1

Weight :

1.31247g

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 3.5mA

Factory Lead Time :

13 Weeks

Fall Time (Typ) :

5.7 ns

Turn On Delay Time :

31 ns

Power Dissipation-Max :

357W Tc

Continuous Drain Current (ID) :

35A

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

105A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

245

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.11Ohm

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Rise Time :

21ns

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

110m Ω @ 17.5A, 10V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

809 mJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4895pF @ 100V

HTS Code :

8541.29.00.95

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

89 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Number of Terminations :

2

DS Breakdown Voltage-Min :

650V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

FRFET®, SuperFET® II