FCA36N60NF

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Mfr.Part #
FCA36N60NF
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 34.9A TO3PN
Stock
309
In Stock :
309

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
34.9A Tc
Mount :
Through Hole
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Rise Time :
17ns
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Threshold Voltage :
3.7V
Length :
16.2mm
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
600V
Width :
5mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
95m Ω @ 18A, 10V
Radiation Hardening :
No
Number of Elements :
1
Turn-Off Delay Time :
92 ns
Gate to Source Voltage (Vgs) :
30V
Mounting Type :
Through Hole
Height :
20.1mm
Package / Case :
TO-3P-3, SC-65-3
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
112nC @ 10V
Element Configuration :
Single
Published :
2013
Input Capacitance (Ciss) (Max) @ Vds :
4245pF @ 100V
Weight :
6.401g
Drain-source On Resistance-Max :
0.095Ohm
Transistor Element Material :
SILICON
Packaging :
Tube
Nominal Vgs :
3.7 V
FET Type :
N-Channel
Turn On Delay Time :
27 ns
Vgs(th) (Max) @ Id :
5V @ 250μA
Factory Lead Time :
39 Weeks
Continuous Drain Current (ID) :
34.9A
Power Dissipation-Max :
312W Tc
Fall Time (Typ) :
4 ns
Series :
FRFET®, SuperFET® II
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Power Dissipation :
312W
Datasheets
FCA36N60NF
Introducing Transistors - FETs, MOSFETs - Single onsemi FCA36N60NF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Number of Terminations:3, FCA36N60NF pinout, FCA36N60NF datasheet PDF, FCA36N60NF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCA36N60NF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCA36N60NF


N-Channel Tube 95m Ω @ 18A, 10V ±30V 4245pF @ 100V 112nC @ 10V TO-3P-3, SC-65-3

FCA36N60NF Description


The SupreMOS MOSFET is On Semiconductor's next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Supre-MOS FRFET MOSFET's optimized body diode reverse recovery performance can remove additional component and improve system reliability.



FCA36N60NF Features


  • RDS(on) = 80 mΩ (Typ.) @ VGS = 10 V, lD = 18 A

  • UIltra Low Gate Charge (Typ. Qg = 86 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF)

  • 100% Avalanche Tested

  • RoHS Compliant

  • No SVHC

  • Turn-Off Delay Time: 92 ns

  • Power Dissipation-Max: 312W Tc



FCA36N60NF Applications


  • Solar Inverter

  • AC-DC Power Supply

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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