FCA35N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5mm

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Package / Case :

TO-3P-3, SC-65-3

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

1455 mJ

Mounting Type :

Through Hole

Weight :

6.401g

Transistor Application :

SWITCHING

Fall Time (Typ) :

73 ns

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

35A

Threshold Voltage :

3V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Turn On Delay Time :

34 ns

Drain-source On Resistance-Max :

0.098Ohm

Input Capacitance (Ciss) (Max) @ Vds :

6640pF @ 25V

Published :

2013

HTS Code :

8541.29.00.95

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

105 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate Charge (Qg) (Max) @ Vgs :

181nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Rise Time :

120ns

Mount :

Through Hole

JESD-609 Code :

e3

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

105A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

98m Ω @ 17.5A, 10V

Radiation Hardening :

No

Length :

15.8mm

Drain to Source Breakdown Voltage :

650V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Number of Pins :

3

Power Dissipation :

312.5W

Power Dissipation-Max :

312.5W Tc

Series :

SuperFET™

Height :

20.1mm