ESM3045DV

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Mfr.Part #
ESM3045DV
Manufacturer
STMicroelectronics
Package / Case
ISOTOP
Datasheet
Download
Description
TRANS NPN DARL 450V 24A ISOTOP
Stock
29,539
In Stock :
29,539

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
4
Transistor Type :
NPN - Darlington
Configuration :
DARLINGTON WITH BUILT-IN DIODE
Number of Terminations :
4
Collector Emitter Saturation Voltage :
2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Terminal Position :
UPPER
Lead Free :
Lead Free
Mount :
Chassis Mount, Screw
Max Power Dissipation :
125W
Collector Emitter Breakdown Voltage :
450V
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 20A 5V
Mounting Type :
Chassis Mount
Emitter Base Voltage (VEBO) :
7V
VCEsat-Max :
2 V
Terminal Finish :
Nickel (Ni)
Collector Emitter Voltage (VCEO) :
450V
Operating Temperature :
150°C TJ
Number of Elements :
1
Max Collector Current :
24A
Package / Case :
ISOTOP
Vce Saturation (Max) @ Ib, Ic :
1.4V @ 1.2A, 20A
Current Rating :
24A
Voltage - Rated DC :
450V
Radiation Hardening :
No
Transistor Application :
SWITCHING
Base Part Number :
ESM3045
Terminal Form :
UNSPECIFIED
Packaging :
Tube
hFE Min :
120
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Case Connection :
Isolated
Polarity :
NPN
Number of Pins :
4
Datasheets
ESM3045DV
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics ESM3045DV from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Chassis Mount, Operating Temperature:150°C TJ, Package / Case:ISOTOP, Base Part Number:ESM3045, Number of Pins:4, ESM3045DV pinout, ESM3045DV datasheet PDF, ESM3045DV amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics ESM3045DV ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics ESM3045DV


NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount

ESM3045DV Overview


In this device, the DC current gain is 120 @ 20A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 1.2A, 20A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (24A).Maximum collector currents can be below 24A volts.

ESM3045DV Features


the DC current gain for this device is 120 @ 20A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 1.4V @ 1.2A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 24A


ESM3045DV Applications


There are a lot of STMicroelectronics
ESM3045DV applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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