EMZ52T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Frequency - Transition :

350MHz 300MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Voltage - Collector Emitter Breakdown (Max) :

50V

Polarity/Channel Type :

NPN AND PNP

Number of Terminations :

6

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

100mA

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-30 Code :

R-PDSO-F6

Package / Case :

SOT-563, SOT-666

Operating Temperature :

150°C TJ

Transistor Type :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

13 Weeks

Power - Max :

150mW

Transistor Application :

SWITCHING

Transition Frequency :

350MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA

Number of Elements :

2

Published :

2015

Terminal Position :

Dual

Surface Mount :

yes

ECCN Code :

EAR99