EMZ2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Max Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

10

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Max Collector Current :

150mA

Collector Base Voltage (VCBO) :

60V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Published :

2004

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

-6V

Gain Bandwidth Product :

140MHz

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Collector Emitter Saturation Voltage :

-500mV

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

150mA

Pin Count :

6

Transistor Application :

SWITCHING

Polarity :

NPN, PNP

Pbfree Code :

yes

Continuous Collector Current :

150mA

JESD-609 Code :

e2

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Transistor Type :

NPN, PNP

Frequency - Transition :

180MHz 140MHz

hFE Min :

120

Number of Terminations :

6

Transition Frequency :

180MHz

Radiation Hardening :

No

Terminal Form :

Flat

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Base Part Number :

*MZ2

Peak Reflow Temperature (Cel) :

260