EMD5DXV6T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

250mV

Surface Mount :

yes

Qualification Status :

Not Qualified

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.13

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Polarity :

NPN

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current Rating :

100mA

JESD-609 Code :

e3

Number of Pins :

6

Power Dissipation :

357mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Number of Elements :

2

Min Operating Temperature :

-55°C

hFE Min :

20

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Voltage - Rated DC :

50V

Package / Case :

SOT-563, SOT-666

Continuous Collector Current :

100mA

Lead Free :

Lead Free

Resistor - Base (R1) :

4.7k Ω, 47k Ω

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Form :

Flat

Mounting Type :

Surface Mount

Pbfree Code :

yes

Resistor - Emitter Base (R2) :

10k Ω, 47k Ω

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

500mW

Current - Collector Cutoff (Max) :

500nA

Published :

2009

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 20 @ 5mA 10V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)