EMB3T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

SOT-563, SOT-666

JESD-609 Code :

e2

Element Configuration :

Dual

hFE Min :

100

Lead Free :

Lead Free

Terminal Form :

Flat

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Transition Frequency :

250MHz

Pin Count :

6

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Polarity :

PNP

Radiation Hardening :

No

HTS Code :

8541.21.00.75

Voltage - Rated DC :

-50V

Current Rating :

-100mA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Terminal Finish :

TIN COPPER

Number of Pins :

6

Additional Feature :

BUILT-IN BIAS RESISTOR

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

4.7k Ω

Published :

2012

Frequency - Transition :

250MHz

Base Part Number :

MB3

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

100mA

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 5mA

Number of Terminations :

6

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Max Power Dissipation :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

ECCN Code :

EAR99