ECH8410-TL-H
- Mfr.Part #
- ECH8410-TL-H
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A 8ECH
- Stock
- 19,768
- In Stock :
- 19,768
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Height :
- 900μm
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Width :
- 2.3mm
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 1.6W Ta
- Number of Pins :
- 8
- Surface Mount :
- yes
- Turn-Off Delay Time :
- 110 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 10V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Package / Case :
- 8-SMD, Flat Lead
- Pin Count :
- 8
- JESD-609 Code :
- e6
- Length :
- 2.9mm
- Turn On Delay Time :
- 17 ns
- Published :
- 2012
- Fall Time (Typ) :
- 72 ns
- Halogen Free :
- Halogen Free
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 6A, 10V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 50ns
- FET Type :
- N-Channel
- Number of Channels :
- 2
- Continuous Drain Current (ID) :
- 12A
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- ECH8410-TL-H

N-Channel Tape & Reel (TR) 10m Ω @ 6A, 10V ±20V 1700pF @ 10V 31nC @ 10V 30V 8-SMD, Flat Lead
ECH8410-TL-H Overview
A device's maximum input capacitance is 1700pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
ECH8410-TL-H Features
a continuous drain current (ID) of 12A
the turn-off delay time is 110 ns
a 30V drain to source voltage (Vdss)
ECH8410-TL-H Applications
There are a lot of ON Semiconductor
ECH8410-TL-H applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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