DXTN5860DFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Emitter Voltage-Max :

60 V

Surface Mount :

yes

Mounting Style :

SMD/SMT

Transistor Type :

NPN

Brand :

Diodes Incorporated

Technology :

Si

Frequency - Transition :

115MHz

Reference Standard :

AEC-Q101

Number of Terminals :

3

Transistor Application :

SWITCHING

Qualification :

AEC-Q101

Additional Feature :

High Reliability

Vce Saturation (Max) @ Ib, Ic :

315mV @ 300mA, 6A

Terminal Form :

NO LEAD

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C ~ 150°C (TJ)

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

6 A

Product Type :

BJTs - Bipolar Transistors

VCEsat-Max :

0.315 V

Collector Current-Max (IC) :

6 A

Factory Lead Time :

13 Weeks

Transition Frequency :

320

Series :

-

Package :

Tape and Reel (TR)

DC Current Gain-Min (hFE) :

30

Current - Collector Cutoff (Max) :

100nA

Package Shape :

Square

Configuration :

Single

Manufacturer :

Diodes Incorporated

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

280 @ 500mA, 2V

Number of Elements :

1

Transistor Polarity :

PNP

Collector-Base Capacitance-Max :

30 pF

Transistor Element Material :

SILICON

Supplier Device Package :

U-DFN2020-3 (Type B)

Product Status :

Active

JESD-30 Code :

S-PDSO-N3

Polarity/Channel Type :

NPN

Power - Max :

690 mW

Continuous Collector Current :

100

MSL :

MSL 1 - Unlimited

Package / Case :

3-UDFN Exposed Pad

Subcategory :

Transistors

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

1.25 W

Packaging :

Cut Tape

Maximum Operating Temperature :

+ 150 C

Voltage - Collector Emitter Breakdown (Max) :

60 V

Mounting Type :

Surface Mount

Power Dissipation :

1.5

Product Category :

Bipolar Transistors - BJT