DXT790AP5-13
- Mfr.Part #
- DXT790AP5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A POWERDI5
- Stock
- 3,604
- In Stock :
- 3,604
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.15mm
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 300mA, 3A
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -170mV
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Width :
- 5.45mm
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-252
- ECCN Code :
- EAR99
- Length :
- 4.05mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- hFE Min :
- 300
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 3.2W
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- DXT790
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Max Collector Current :
- 3A
- Power Dissipation :
- 3.2W
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 20nA
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- -3A
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 2010
- Package / Case :
- PowerDI™ 5
- Peak Reflow Temperature (Cel) :
- 260
- Manufacturer Package Identifier :
- POWERDI-5
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Weight :
- 95.991485mg
- Datasheets
- DXT790AP5-13

PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT790AP5-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -170mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.
DXT790AP5-13 Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
DXT790AP5-13 Applications
There are a lot of Diodes Incorporated
DXT790AP5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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