DTC143ZCAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

300mV

Polarity/Channel Type :

NPN

VCEsat-Max :

0.3 V

Transistor Type :

NPN - Pre-Biased

Max Power Dissipation :

200mW

Resistor - Emitter Base (R2) :

4.7 k Ω

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Frequency - Transition :

250MHz

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Resistor - Base (R1) :

4.7 k Ω

Max Collector Current :

100mA

HTS Code :

8541.21.00.75

Operating Temperature (Max) :

150°C

Mounting Type :

Surface Mount

Published :

2015

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Application :

SWITCHING

Transition Frequency :

250MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

3

JESD-30 Code :

R-PDSO-G3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Qualification Status :

Not Qualified

Power - Max :

200mW

Terminal Form :

Gull wing