DTC123EMFHAT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max :

150 mW

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Number of Terminals :

3

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

2.2 kOhms

Reference Standard :

AEC-Q101

Package / Case :

SOT-723

Transistor Polarity :

Single NPN

Manufacturer :

Rohm Semiconductor

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Subcategory :

Transistors

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G3

Power Dissipation :

0.15(W)

Terminal Position :

Dual

MSL :

MSL 1 - Unlimited

Brand :

Rohm Semiconductor

Product Status :

Not For New Designs

Configuration :

Single

Collector Current-Max (IC) :

0.1 A

Resistor - Base (R1) :

2.2 kOhms

ECCN Code :

EAR99

Collector-Emitter Voltage-Max :

50 V

Product Category :

Bipolar Transistors - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 20mA, 5V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Mounting Style :

SMD/SMT

RoHS :

Details

DC Current Gain-Min (hFE) :

20

Series :

Automotive, AEC-Q101

Collector Current (DC) :

0.1(A)

Voltage - Collector Emitter Breakdown (Max) :

50 V

Output Voltage :

300 mV

Package Type :

VMT

Typical Resistor Ratio :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Digi-Reel?

DC Current Gain :

20

Packaging :

Tape and Reel

Emitter-Collector Voltage (Max) :

50(V)

Continuous Collector Current :

100mA

Reach Compliance Code :

Compliant

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Type :

NPN

Qualification :

AEC-Q101

Transistor Element Material :

SILICON

Number of Elements :

1

Current - Collector (Ic) (Max) :

100 mA

Polarity/Channel Type :

NPN

Supplier Device Package :

VMT3

Transistor Type :

NPN - Pre-Biased