DTC114YET1G

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Mfr.Part #
DTC114YET1G
Manufacturer
onsemi
Package / Case
SC-75, SOT-416
Datasheet
Download
Description
TRANS PREBIAS NPN 50V 100MA SC75
Stock
23,769
In Stock :
23,769

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Collector Emitter Voltage (VCEO) :
50V
Terminal Position :
Dual
Power Dissipation :
200mW
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Length :
1.65mm
Height :
800μm
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300μA, 10mA
Halogen Free :
Halogen Free
Pin Count :
3
Max Power Dissipation :
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA 10V
Max Collector Current :
100mA
Surface Mount :
yes
Continuous Collector Current :
100mA
Published :
2003
Mounting Type :
Surface Mount
Min Operating Temperature :
-55°C
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Breakdown Voltage :
50V
Resistor - Emitter Base (R2) :
47 k Ω
Collector Emitter Saturation Voltage :
250mV
Width :
900μm
Pbfree Code :
yes
JESD-609 Code :
e3
ECCN Code :
EAR99
Lead Free :
Lead Free
Package / Case :
SC-75, SOT-416
Packaging :
Tape and Reel (TR)
Resistor - Base (R1) :
10 k Ω
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN - Pre-Biased
Current Rating :
100mA
Max Operating Temperature :
150°C
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Voltage - Rated DC :
50V
Factory Lead Time :
8 Weeks
Polarity :
NPN
Current - Collector Cutoff (Max) :
500nA
Max Breakdown Voltage :
50V
Number of Elements :
1
Emitter Base Voltage (VEBO) :
6V
Contact Plating :
Tin
Peak Reflow Temperature (Cel) :
260
Additional Feature :
BUILT-IN BIAS RESISTOR RATIO IS 0.21
hFE Min :
80
Radiation Hardening :
No
Base Part Number :
DTC114
Number of Terminations :
3
Datasheets
DTC114YET1G
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased onsemi DTC114YET1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:SC-75, SOT-416, Base Part Number:DTC114, Number of Terminations:3, DTC114YET1G pinout, DTC114YET1G datasheet PDF, DTC114YET1G amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased onsemi DTC114YET1G ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi DTC114YET1G


DTC114YET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at

The ON Semiconductor DTC114YET1G is a single, pre-biased bipolar junction transistor (BJT) designed for use in a wide range of applications. It is a NPN transistor with a maximum collector current of 200 mA and a maximum collector-emitter voltage of 40 V. The device is housed in a SC-75 package, which is a small surface-mount package with a footprint of only 2.0 mm x 1.25 mm.

The DTC114YET1G is designed to provide excellent performance in a wide range of applications, including power management, audio amplifiers, and switching circuits. It features a low saturation voltage, high gain, and low noise. The device is pre-biased, meaning that it is already biased to a certain voltage and current, making it easier to use in applications where the bias point needs to be set quickly.

The DTC114YET1G is an ideal choice for applications where space is limited, such as portable electronics and consumer products. It is also suitable for use in automotive and industrial applications.
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