DTC114TCAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Frequency - Transition :

250MHz

Operating Temperature (Max) :

150°C

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

HTS Code :

8541.21.00.75

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Transition Frequency :

250MHz

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2016

Additional Feature :

Digital

Number of Elements :

1

Max Breakdown Voltage :

50V

Polarity/Channel Type :

NPN

VCEsat-Max :

0.3 V

Transistor Element Material :

SILICON

Max Collector Current :

100mA

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA ICBO

Resistor - Base (R1) :

10 k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

NPN - Pre-Biased

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

200mW

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

Terminal Form :

Gull wing

Power - Max :

200mW

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

RoHS Status :

ROHS3 Compliant