DTC114TCAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

3

Max Power Dissipation :

200mW

Current - Collector Cutoff (Max) :

500nA ICBO

Mounting Type :

Surface Mount

Transition Frequency :

250MHz

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

HTS Code :

8541.21.00.75

Power - Max :

200mW

Frequency - Transition :

250MHz

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Operating Temperature (Max) :

150°C

Mount :

Surface Mount

Additional Feature :

Digital

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Terminal Form :

Gull wing

JESD-609 Code :

e1

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

10 k Ω

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Factory Lead Time :

13 Weeks

VCEsat-Max :

0.3 V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Published :

2016