DTC114EM3T5G
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- Mfr.Part #
- DTC114EM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V SOT723
- Stock
- 294,629
- In Stock ：
- 294,629
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Operating Supply Voltage :
- 50V
- Package / Case :
- SOT-723
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Collector Emitter Saturation Voltage :
- 250mV
- Collector Emitter Voltage (VCEO) :
- 50V
- Continuous Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistor - Base (R1) :
- 10 k Ω
- Voltage - Rated DC :
- 50V
- Height :
- 550μm
- Max Operating Temperature :
- 150°C
- Pin Count :
- 3
- Contact Plating :
- Tin
- hFE Min :
- 35
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Current Rating :
- 100mA
- Published :
- 1997
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 5mA 10V
- Max Power Dissipation :
- 260mW
- REACH SVHC :
- No SVHC
- Halogen Free :
- Halogen Free
- RoHS Status :
- ROHS3 Compliant
- Min Operating Temperature :
- -55°C
- Max Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Length :
- 1.25mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Max Output Current :
- 100mA
- Number of Terminations :
- 3
- Power Dissipation :
- 260mW
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Transistor Type :
- NPN - Pre-Biased
- Base Part Number :
- DTC114
- Width :
- 850μm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Surface Mount :
- yes
- Number of Elements :
- 1
- Datasheets
- DTC114EM3T5G
DTC114EM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
DTC114EM3T5G Description
The ON Semiconductor DTC114EM3T5G is a Digital Transistor (BRT) (R1 = 10 kΩ, R2 = 10 kΩ) with a single transistor and a monolithic bias network made up of two resistors: a series base resistor and a base-emitter resistor.
DTC114EM3T5G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
DTC114EM3T5G Applications
-
Automotive
-
Power Management
-
Industrial
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