DSS60600MZ4-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 2V

Gain Bandwidth Product :

100MHz

Published :

2008

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

1.2W

Terminal Form :

Gull wing

Base Part Number :

DSS60600

Collector Emitter Saturation Voltage :

350mV

Transition Frequency :

100MHz

Number of Pins :

3

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

100V

Number of Terminations :

4

Emitter Base Voltage (VEBO) :

6V

Vce Saturation (Max) @ Ib, Ic :

350mV @ 600mA, 6A

Element Configuration :

Single

Weight :

7.994566mg

Collector Emitter Voltage (VCEO) :

60V

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Case Connection :

COLLECTOR

Radiation Hardening :

No

Transistor Element Material :

SILICON

Lead Free :

Lead Free

hFE Min :

120

Power Dissipation :

2W

Height :

1.6mm

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

60V

Max Power Dissipation :

1.2W

Transistor Application :

SWITCHING

Width :

3.5mm

Factory Lead Time :

15 Weeks

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

1

Termination :

SMD/SMT

Package / Case :

TO-261-4, TO-261AA

Length :

6.5mm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Max Collector Current :

6A

Pin Count :

4

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Polarity/Channel Type :

PNP

Frequency :

100MHz

Terminal Position :

Dual

ECCN Code :

EAR99