DRDPB16W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

PNP - Pre-Biased + Diode

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Pbfree Code :

yes

Radiation Hardening :

No

Current Rating :

-600mA

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Polarity :

PNP

Weight :

6.010099mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Max Output Current :

600mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Element Configuration :

Single

Max Power Dissipation :

200mW

Transition Frequency :

200MHz

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

300mV

Continuous Collector Current :

600mA

Published :

2008

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistor - Emitter Base (R2) :

10 k Ω

Number of Terminations :

6

Number of Pins :

6

Length :

2.2mm

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Base Part Number :

DRDPB16

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

600mA

Min Operating Temperature :

-55°C

Pin Count :

6

Operating Supply Voltage :

50V

hFE Min :

56

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

19 Weeks

Voltage - Rated DC :

-50V

Max Operating Temperature :

150°C

Height :

1mm

JESD-609 Code :

e3

Terminal Position :

Dual

Resistor - Base (R1) :

1 k Ω

Width :

1.35mm

Frequency - Transition :

200MHz

Mount :

Surface Mount

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount