DPLS350E-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

60V

Transistor Application :

SWITCHING

Length :

6.7mm

Terminal Finish :

Matte Tin (Sn)

Transition Frequency :

100MHz

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Pin Count :

4

Weight :

7.994566mg

Peak Reflow Temperature (Cel) :

260

Number of Pins :

4

Current - Collector Cutoff (Max) :

100nA ICBO

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Gain Bandwidth Product :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Element Configuration :

Single

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 200mA, 2A

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

1W

Pbfree Code :

yes

Transistor Element Material :

SILICON

Width :

3.7mm

Case Connection :

COLLECTOR

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.65mm

Radiation Hardening :

No

Number of Elements :

1

Number of Terminations :

4

Frequency :

100MHz

Mounting Type :

Surface Mount

Base Part Number :

DPLS350

Package / Case :

TO-261-4, TO-261AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

15 Weeks

Collector Emitter Saturation Voltage :

-300mV

Polarity/Channel Type :

PNP

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

-6V

Terminal Position :

Dual

JESD-609 Code :

e3

Power Dissipation :

1W

Max Collector Current :

3A