DP0150ADJ-7
- Mfr.Part #
- DP0150ADJ-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-963
- Datasheet
- Download
- Description
- TRANS 2PNP 50V 0.1A SOT963
- Stock
- 4,635
- In Stock :
- 4,635
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Number of Elements :
- 2
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Width :
- 800μm
- REACH SVHC :
- No SVHC
- Frequency :
- 80MHz
- Pbfree Code :
- yes
- Package / Case :
- SOT-963
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- 2 PNP (Dual)
- Number of Terminations :
- 6
- Element Configuration :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- DP0150AD
- Length :
- 1mm
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 80MHz
- JESD-609 Code :
- e3
- Transition Frequency :
- 80MHz
- Height :
- 450μm
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- Max Power Dissipation :
- 300mW
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- DP0150ADJ-7

DP0150ADJ-7 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Diodes Incorporated stock available at
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