DP0150ADJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Transition Frequency :

80MHz

Mounting Type :

Surface Mount

Gain Bandwidth Product :

80MHz

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Height :

450μm

Frequency :

80MHz

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Max Breakdown Voltage :

50V

Transistor Type :

2 PNP (Dual)

REACH SVHC :

No SVHC

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Operating Temperature :

-55°C~150°C TJ

Polarity :

PNP

Pin Count :

6

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-963

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2009

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

DP0150AD

Element Configuration :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Length :

1mm

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

15 Weeks

Width :

800μm

Max Collector Current :

100mA

Number of Pins :

6

Mount :

Surface Mount

Power Dissipation :

300mW

Number of Terminations :

6

Number of Elements :

2

Transistor Element Material :

SILICON