DP0150ADJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA 6V

Polarity :

PNP

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Width :

800μm

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Power Dissipation :

300mW

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

80MHz

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Terminal Form :

Flat

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Published :

2009

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Base Part Number :

DP0150AD

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Max Power Dissipation :

300mW

Number of Terminations :

6

Pin Count :

6

Number of Pins :

6

Length :

1mm

Height :

450μm

Collector Base Voltage (VCBO) :

50V

Package / Case :

SOT-963

Pbfree Code :

yes

Mount :

Surface Mount

REACH SVHC :

No SVHC

Frequency :

80MHz

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Elements :

2

Transition Frequency :

80MHz