DN3545N8-G

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Mfr.Part #
DN3545N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 450V 200MA TO243AA
Stock
61,200
In Stock :
61,200

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
JESD-30 Code :
R-PSSO-F3
Current - Continuous Drain (Id) @ 25°C :
200mA
Turn-Off Delay Time :
30 ns
Product Category :
MOSFET
Drain to Source Breakdown Voltage :
450V
JEDEC-95 Code :
TO-243AA
Width :
2.6mm
Product :
MOSFET Small Signal
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Supplier Device Package :
TO-243AA (SOT-89)
Terminal Finish :
Matte Tin (Sn) - annealed
RoHS Status :
ROHS3 Compliant
Rise Time :
30ns
Number of Terminals :
3
Package Shape :
RECTANGULAR
Number of Elements :
1
Drain to Source Voltage (Vdss) :
450V
Brand :
Microchip Technology / Atmel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Radiation Hardening :
No
Packaging :
Tape and Reel (TR)
Number of Pins :
4
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e3
Manufacturer :
Microchip
Power Dissipation (Max) :
1.6W (Ta)
Product Status :
Active
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
450 V
Product Type :
MOSFET
Base Product Number :
DN3545
Continuous Drain Current Id :
200
Power Dissipation-Max :
1.6W Ta
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Pulsed Drain Current-Max (IDM) :
0.3A
Contact Plating :
Tin
Channel Type :
N
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
1 N-Channel
Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Case Connection :
DRAIN
Fall Time (Typ) :
30 ns
Type :
FET
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
200mA
Mounting Type :
Surface Mount
Height :
1.6mm
MSL :
MSL 1 - Unlimited
Lead Free :
Lead Free
Additional Feature :
FAST SWITCHING
Operating Mode :
Depletion Mode
Factory Lead Time :
6 Weeks
Channel Mode :
Depletion
Mounting Style :
SMD/SMT
Length :
4.6mm
Drain Current-Max (Abs) (ID) :
0.2A
Number of Terminations :
3
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
0V
FET Type :
N-Channel
Terminal Position :
Single
Package / Case :
TO-243AA
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
1.6 W
Published :
2005
ECCN Code :
EAR99
RoHS :
Details
Reach Compliance Code :
Compliant
Qualification :
-
Terminal Form :
Flat
Rds On (Max) @ Id, Vgs :
20 Ω @ 150mA, 0V
Power Dissipation :
1.6W
FET Feature :
Depletion Mode
Surface Mount :
yes
Vgs(th) (Max) @ Id :
--
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
Number of Channels :
1
Weight :
52.786812mg
Element Configuration :
Single
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
20 Ω
Series :
--
Time@Peak Reflow Temperature-Max (s) :
40
Turn On Delay Time :
20 ns
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Type:FET, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-243AA, Number of Channels:1, DN3545N8-G pinout, DN3545N8-G datasheet PDF, DN3545N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3545N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3545N8-G


N-Channel Tape & Reel (TR) 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-243AA

DN3545N8-G Overview


The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=450V, and ID flows to VDS at 450VVDS, the drain-source breakdown voltage is 450V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.3A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 450 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 450V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3545N8-G Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.3A.
a 450V drain to source voltage (Vdss)


DN3545N8-G Applications


There are a lot of Microchip Technology
DN3545N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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