DN3545N8-G
- Mfr.Part #
- DN3545N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 200MA TO243AA
- Stock
- 61,200
- In Stock :
- 61,200
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- RoHS :
- Details
- Brand :
- Microchip Technology / Atmel
- Factory Lead Time :
- 6 Weeks
- MSL :
- MSL 1 - Unlimited
- Type :
- FET
- Maximum Operating Temperature :
- + 150 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 450 V
- Transistor Application :
- SWITCHING
- Rise Time :
- 30ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- REACH SVHC :
- No SVHC
- FET Feature :
- Depletion Mode
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 1.6W
- Base Product Number :
- DN3545
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminals :
- 3
- Weight :
- 52.786812mg
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 1.6 W
- Surface Mount :
- yes
- Number of Pins :
- 4
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Turn On Delay Time :
- 20 ns
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 450V
- Drain-source On Resistance-Max :
- 20 Ω
- Power Dissipation (Max) :
- 1.6W (Ta)
- Supplier Device Package :
- TO-243AA (SOT-89)
- Pulsed Drain Current-Max (IDM) :
- 0.3A
- Vgs(th) (Max) @ Id :
- --
- Width :
- 2.6mm
- Channel Type :
- N
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.6W Ta
- Vgs (Max) :
- ±20V
- Published :
- 2005
- Current - Continuous Drain (Id) @ 25°C :
- 200mA
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- --
- Mount :
- Surface Mount
- Additional Feature :
- FAST SWITCHING
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transistor Type :
- 1 N-Channel
- Mounting Style :
- SMD/SMT
- Product Category :
- MOSFET
- Configuration :
- Single
- Product :
- MOSFET Small Signal
- Product Status :
- Active
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Mounting Type :
- Surface Mount
- Continuous Drain Current Id :
- 200
- Length :
- 4.6mm
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 150mA, 0V
- Continuous Drain Current (ID) :
- 200mA
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 30 ns
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Qualification :
- -
- Package / Case :
- TO-243AA
- Operating Mode :
- Depletion Mode
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Manufacturer :
- Microchip
- Height :
- 1.6mm
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Drain to Source Breakdown Voltage :
- 450V
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- JEDEC-95 Code :
- TO-243AA
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Product Type :
- MOSFET
- Channel Mode :
- Depletion
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 30 ns
- Datasheets
- DN3545N8-G

N-Channel Tape & Reel (TR) 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-243AA
DN3545N8-G Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=450V, and ID flows to VDS at 450VVDS, the drain-source breakdown voltage is 450V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.3A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 450 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 450V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3545N8-G Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.3A.
a 450V drain to source voltage (Vdss)
DN3545N8-G Applications
There are a lot of Microchip Technology
DN3545N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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