DN3545N8-G
- Mfr.Part #
- DN3545N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 450V 200MA TO243AA
- Stock
- 61,200
- In Stock :
- 61,200
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- JESD-30 Code :
- R-PSSO-F3
- Current - Continuous Drain (Id) @ 25°C :
- 200mA
- Turn-Off Delay Time :
- 30 ns
- Product Category :
- MOSFET
- Drain to Source Breakdown Voltage :
- 450V
- JEDEC-95 Code :
- TO-243AA
- Width :
- 2.6mm
- Product :
- MOSFET Small Signal
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Supplier Device Package :
- TO-243AA (SOT-89)
- Terminal Finish :
- Matte Tin (Sn) - annealed
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 30ns
- Number of Terminals :
- 3
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 450V
- Brand :
- Microchip Technology / Atmel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Minimum Operating Temperature :
- - 55 C
- JESD-609 Code :
- e3
- Manufacturer :
- Microchip
- Power Dissipation (Max) :
- 1.6W (Ta)
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 450 V
- Product Type :
- MOSFET
- Base Product Number :
- DN3545
- Continuous Drain Current Id :
- 200
- Power Dissipation-Max :
- 1.6W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 0.3A
- Contact Plating :
- Tin
- Channel Type :
- N
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 30 ns
- Type :
- FET
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 200mA
- Mounting Type :
- Surface Mount
- Height :
- 1.6mm
- MSL :
- MSL 1 - Unlimited
- Lead Free :
- Lead Free
- Additional Feature :
- FAST SWITCHING
- Operating Mode :
- Depletion Mode
- Factory Lead Time :
- 6 Weeks
- Channel Mode :
- Depletion
- Mounting Style :
- SMD/SMT
- Length :
- 4.6mm
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 1.6 W
- Published :
- 2005
- ECCN Code :
- EAR99
- RoHS :
- Details
- Reach Compliance Code :
- Compliant
- Qualification :
- -
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 150mA, 0V
- Power Dissipation :
- 1.6W
- FET Feature :
- Depletion Mode
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- --
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Weight :
- 52.786812mg
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 20 Ω
- Series :
- --
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Delay Time :
- 20 ns
- Datasheets
- DN3545N8-G
DN3545N8-G Documents

N-Channel Tape & Reel (TR) 20 Ω @ 150mA, 0V ±20V 360pF @ 25V 450V TO-243AA
DN3545N8-G Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.When VGS=450V, and ID flows to VDS at 450VVDS, the drain-source breakdown voltage is 450V in this device.As shown in the table below, the drain current of this device is 0.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.3A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 450 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 450V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3545N8-G Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.3A.
a 450V drain to source voltage (Vdss)
DN3545N8-G Applications
There are a lot of Microchip Technology
DN3545N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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