DN3525N8-G

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Mfr.Part #
DN3525N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 250V 360MA TO243AA
Stock
40,762
In Stock :
40,762

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
20 ns
Length :
4.6mm
Power Dissipation-Max :
1.6W Ta
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Continuous Drain Current Id :
360
Weight :
52.786812mg
Transistor Type :
1 N-Channel
Operating Mode :
Depletion Mode
Peak Reflow Temperature (Cel) :
260
JESD-30 Code :
R-PSSO-F3
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Lead Free :
Lead Free
RoHS :
Details
Drain to Source Breakdown Voltage :
250V
FET Type :
N-Channel
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
250V
Channel Type :
N
Turn-Off Delay Time :
25 ns
Product Status :
Active
Subcategory :
MOSFETs
Base Product Number :
DN3525
Pulsed Drain Current-Max (IDM) :
1A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
SMD/SMT
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
0V
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
360mA
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Channel Mode :
Depletion
REACH SVHC :
No SVHC
Factory Lead Time :
7 Weeks
Qualification Status :
Not Qualified
Terminal Form :
Flat
Additional Feature :
FAST SWITCHING
Package / Case :
TO-243AA
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn) - annealed
ECCN Code :
EAR99
Brand :
Microchip Technology
FET Feature :
Depletion Mode
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Vgs(th) (Max) @ Id :
--
Published :
2009
Surface Mount :
yes
DS Breakdown Voltage-Min :
250 V
Number of Pins :
3
JEDEC-95 Code :
TO-243AA
Number of Channels :
1
Fall Time (Typ) :
25 ns
Package Shape :
RECTANGULAR
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1.6W
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
Type :
FET
Supplier Device Package :
TO-243AA (SOT-89)
Rds On (Max) @ Id, Vgs :
6 Ω @ 200mA, 0V
Transistor Polarity :
N-Channel
Rise Time :
25ns
Qualification :
-
Vgs (Max) :
±20V
Manufacturer :
Microchip
Drain-source On Resistance-Max :
6Ohm
Time@Peak Reflow Temperature-Max (s) :
40
Width :
2.6mm
Power Dissipation (Max) :
1.6W (Ta)
Number of Terminations :
3
Series :
--
Maximum Operating Temperature :
+ 150 C
Height :
1.6mm
Product :
MOSFET Small Signal
Transistor Application :
SWITCHING
Number of Elements :
1
Transistor Element Material :
SILICON
Number of Terminals :
3
Packaging :
Tape and Reel (TR)
MSL :
MSL 1 - Unlimited
Product Category :
MOSFET
Configuration :
Single
Polarity/Channel Type :
N-Channel
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Pins:3, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Type:FET, Number of Terminations:3, DN3525N8-G pinout, DN3525N8-G datasheet PDF, DN3525N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3525N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 350pF @ 25V 250V TO-243AA

DN3525N8-G Overview


A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 360mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

DN3525N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 1A.
a 250V drain to source voltage (Vdss)


DN3525N8-G Applications


There are a lot of Microchip Technology
DN3525N8-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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