DN3525N8-G
- Mfr.Part #
- DN3525N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 360MA TO243AA
- Stock
- 40,762
- In Stock :
- 40,762
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- Depletion Mode
- Vgs (Max) :
- ±20V
- Manufacturer :
- Microchip
- Terminal Form :
- Flat
- Mounting Style :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 250V
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2009
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Base Product Number :
- DN3525
- Series :
- --
- Transistor Polarity :
- N-Channel
- JEDEC-95 Code :
- TO-243AA
- Turn On Delay Time :
- 20 ns
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- --
- RoHS :
- Details
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Minimum Operating Temperature :
- - 55 C
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Number of Pins :
- 3
- Product :
- MOSFET Small Signal
- Pulsed Drain Current-Max (IDM) :
- 1A
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-243AA
- Height :
- 1.6mm
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 6Ohm
- DS Breakdown Voltage-Min :
- 250 V
- Terminal Position :
- Single
- Channel Mode :
- Depletion
- Element Configuration :
- Single
- Continuous Drain Current Id :
- 360
- Width :
- 2.6mm
- Factory Lead Time :
- 7 Weeks
- Supplier Device Package :
- TO-243AA (SOT-89)
- Power Dissipation-Max :
- 1.6W Ta
- Qualification :
- -
- Packaging :
- Tape and Reel (TR)
- Weight :
- 52.786812mg
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- MSL :
- MSL 1 - Unlimited
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Channel Type :
- N
- Length :
- 4.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 360mA Tj
- Product Status :
- Active
- Mount :
- Surface Mount
- Rise Time :
- 25ns
- Fall Time (Typ) :
- 25 ns
- Reach Compliance Code :
- Compliant
- Brand :
- Microchip Technology
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 200mA, 0V
- Type :
- FET
- RoHS Status :
- ROHS3 Compliant
- Subcategory :
- MOSFETs
- Power Dissipation (Max) :
- 1.6W (Ta)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 360mA
- Additional Feature :
- FAST SWITCHING
- Power Dissipation :
- 1.6W
- FET Feature :
- Depletion Mode
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 250V
- Turn-Off Delay Time :
- 25 ns
- Qualification Status :
- Not Qualified
- Datasheets
- DN3525N8-G

N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 350pF @ 25V 250V TO-243AA
DN3525N8-G Overview
A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 360mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.
DN3525N8-G Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 1A.
a 250V drain to source voltage (Vdss)
DN3525N8-G Applications
There are a lot of Microchip Technology
DN3525N8-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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