DN3525N8-G

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Mfr.Part #
DN3525N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 250V 360MA TO243AA
Stock
40,762
In Stock :
40,762

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
Depletion Mode
Vgs (Max) :
±20V
Manufacturer :
Microchip
Terminal Form :
Flat
Mounting Style :
SMD/SMT
Mounting Type :
Surface Mount
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
250V
Maximum Operating Temperature :
+ 150 C
Published :
2009
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PSSO-F3
Base Product Number :
DN3525
Series :
--
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-243AA
Turn On Delay Time :
20 ns
Peak Reflow Temperature (Cel) :
260
Vgs(th) (Max) @ Id :
--
RoHS :
Details
Terminal Finish :
Matte Tin (Sn) - annealed
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Number of Pins :
3
Product :
MOSFET Small Signal
Pulsed Drain Current-Max (IDM) :
1A
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
TO-243AA
Height :
1.6mm
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Drain-source On Resistance-Max :
6Ohm
DS Breakdown Voltage-Min :
250 V
Terminal Position :
Single
Channel Mode :
Depletion
Element Configuration :
Single
Continuous Drain Current Id :
360
Width :
2.6mm
Factory Lead Time :
7 Weeks
Supplier Device Package :
TO-243AA (SOT-89)
Power Dissipation-Max :
1.6W Ta
Qualification :
-
Packaging :
Tape and Reel (TR)
Weight :
52.786812mg
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
MSL :
MSL 1 - Unlimited
Drive Voltage (Max Rds On,Min Rds On) :
0V
Channel Type :
N
Length :
4.6mm
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
Product Status :
Active
Mount :
Surface Mount
Rise Time :
25ns
Fall Time (Typ) :
25 ns
Reach Compliance Code :
Compliant
Brand :
Microchip Technology
Product Category :
MOSFET
Transistor Application :
SWITCHING
Number of Channels :
1
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Rds On (Max) @ Id, Vgs :
6 Ω @ 200mA, 0V
Type :
FET
RoHS Status :
ROHS3 Compliant
Subcategory :
MOSFETs
Power Dissipation (Max) :
1.6W (Ta)
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
3
Continuous Drain Current (ID) :
360mA
Additional Feature :
FAST SWITCHING
Power Dissipation :
1.6W
FET Feature :
Depletion Mode
Number of Terminals :
3
FET Type :
N-Channel
REACH SVHC :
No SVHC
Radiation Hardening :
No
ECCN Code :
EAR99
Configuration :
Single
Drain to Source Voltage (Vdss) :
250V
Turn-Off Delay Time :
25 ns
Qualification Status :
Not Qualified
Datasheets
DN3525N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-243AA, Number of Channels:1, Type:FET, Number of Terminations:3, DN3525N8-G pinout, DN3525N8-G datasheet PDF, DN3525N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3525N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 350pF @ 25V 250V TO-243AA

DN3525N8-G Overview


A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 360mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

DN3525N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 1A.
a 250V drain to source voltage (Vdss)


DN3525N8-G Applications


There are a lot of Microchip Technology
DN3525N8-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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