DN3135N8-G
- Mfr.Part #
- DN3135N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 135MA TO243AA
- Stock
- 11,911
- In Stock :
- 11,911
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 150 C
- ECCN Code :
- EAR99
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 135mA Tj
- Channel Type :
- N
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 15 ns
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 1.3W (Ta)
- Series :
- --
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Channel Mode :
- Depletion
- Terminal Form :
- Flat
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 35 Ω @ 150mA, 0V
- JESD-30 Code :
- R-PSSO-F3
- Feedback Cap-Max (Crss) :
- 10 pF
- Drain to Source Breakdown Voltage :
- 350V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 15ns
- Vgs (Max) :
- ±20V
- Qualification :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOW THRESHOLD
- Vgs(th) (Max) @ Id :
- --
- Power Dissipation-Max (Abs) :
- 1.3 W
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 18 Weeks
- Number of Elements :
- 1
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- Microchip
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- Microchip Technology
- Type :
- FET
- JESD-609 Code :
- e3
- Product Category :
- MOSFET
- Reach Compliance Code :
- Compliant
- Turn On Delay Time :
- 10 ns
- Product Status :
- Active
- Supplier Device Package :
- TO-243AA (SOT-89)
- Number of Pins :
- 3
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 135mA
- DS Breakdown Voltage-Min :
- 350 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Voltage :
- 350V
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 350V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 2.6mm
- Drain-source On Resistance-Max :
- 35 Ω
- Package Shape :
- RECTANGULAR
- Weight :
- 52.786812mg
- Base Product Number :
- DN3135
- Fall Time (Typ) :
- 15 ns
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-243AA
- Current :
- 135A
- Height :
- 1.6mm
- Power Dissipation :
- 1.3W
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.6mm
- Continuous Drain Current Id :
- 135
- Product :
- MOSFET Small Signal
- MSL :
- MSL 1 - Unlimited
- Operating Mode :
- Depletion Mode
- FET Feature :
- Depletion Mode
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Power Dissipation-Max :
- 1.3W Ta
- Terminal Position :
- Single
- Datasheets
- DN3135N8-G
DN3135N8-G Documents

N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA
DN3135N8-G Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3135N8-G Features
a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)
DN3135N8-G Applications
There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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