DN3135N8-G

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Mfr.Part #
DN3135N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 135MA TO243AA
Stock
11,911
In Stock :
11,911

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
RoHS :
Details
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
135mA Tj
Channel Type :
N
Case Connection :
DRAIN
Turn-Off Delay Time :
15 ns
Terminal Finish :
Matte Tin (Sn)
Number of Terminations :
3
Product Type :
MOSFET
FET Type :
N-Channel
Power Dissipation (Max) :
1.3W (Ta)
Series :
--
REACH SVHC :
No SVHC
Mount :
Surface Mount
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Depletion
Terminal Form :
Flat
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
35 Ω @ 150mA, 0V
JESD-30 Code :
R-PSSO-F3
Feedback Cap-Max (Crss) :
10 pF
Drain to Source Breakdown Voltage :
350V
RoHS Status :
ROHS3 Compliant
Rise Time :
15ns
Vgs (Max) :
±20V
Qualification :
-
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Additional Feature :
LOW THRESHOLD
Vgs(th) (Max) @ Id :
--
Power Dissipation-Max (Abs) :
1.3 W
Transistor Element Material :
SILICON
Factory Lead Time :
18 Weeks
Number of Elements :
1
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
- 55 C
Manufacturer :
Microchip
Operating Temperature :
-55°C~150°C TJ
Brand :
Microchip Technology
Type :
FET
JESD-609 Code :
e3
Product Category :
MOSFET
Reach Compliance Code :
Compliant
Turn On Delay Time :
10 ns
Product Status :
Active
Supplier Device Package :
TO-243AA (SOT-89)
Number of Pins :
3
Surface Mount :
yes
Continuous Drain Current (ID) :
135mA
DS Breakdown Voltage-Min :
350 V
Drive Voltage (Max Rds On,Min Rds On) :
0V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Voltage :
350V
Number of Channels :
1
Packaging :
Tape and Reel (TR)
Drain to Source Voltage (Vdss) :
350V
Time@Peak Reflow Temperature-Max (s) :
40
Width :
2.6mm
Drain-source On Resistance-Max :
35 Ω
Package Shape :
RECTANGULAR
Weight :
52.786812mg
Base Product Number :
DN3135
Fall Time (Typ) :
15 ns
Number of Terminals :
3
Element Configuration :
Single
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-243AA
Current :
135A
Height :
1.6mm
Power Dissipation :
1.3W
Peak Reflow Temperature (Cel) :
260
Length :
4.6mm
Continuous Drain Current Id :
135
Product :
MOSFET Small Signal
MSL :
MSL 1 - Unlimited
Operating Mode :
Depletion Mode
FET Feature :
Depletion Mode
Published :
2013
Mounting Type :
Surface Mount
Package / Case :
TO-243AA
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Power Dissipation-Max :
1.3W Ta
Terminal Position :
Single
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:FET, Number of Pins:3, Voltage:350V, Number of Channels:1, Mounting Type:Surface Mount, Package / Case:TO-243AA, DN3135N8-G pinout, DN3135N8-G datasheet PDF, DN3135N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3135N8-G


N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA

DN3135N8-G Overview


The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3135N8-G Features


a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)


DN3135N8-G Applications


There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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