DN3135K1-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

0.072A

Terminal Position :

Dual

Number of Pins :

3

Number of Terminations :

3

FET Feature :

Depletion Mode

Fall Time (Typ) :

15 ns

Published :

2010

Feedback Cap-Max (Crss) :

10 pF

Mount :

Surface Mount

Type :

FET

MSL :

MSL 1 - Unlimited

FET Type :

N-Channel

Product Category :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

0V

JESD-30 Code :

R-PDSO-G3

Element Configuration :

Single

Package Type :

SOT-23

Mounting Style :

SMD/SMT

Length :

2.9mm

Transistor Element Material :

SILICON

Supplier Device Package :

SOT-23-3 (TO-236)

Drain to Source Voltage (Vdss) :

350V

Vgs (Max) :

±20V

Number of Elements :

1

Pin Count :

3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Status :

Active

Rise Time :

15ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

15 ns

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Drain-source On Resistance-Max :

35 Ω

Polarity/Channel Type :

N-Channel

Base Product Number :

DN3135

Additional Feature :

LOW THRESHOLD

Weight :

1.437803g

Continuous Drain Current (ID) :

72mA

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Width :

1.3mm

Rds On (Max) @ Id, Vgs :

35 Ω @ 150mA, 0V

Number of Channels :

1

Manufacturer :

Microchip

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

--

Drain to Source Breakdown Voltage :

350V

Configuration :

Single

Power Dissipation-Max :

360mW Ta

JEDEC-95 Code :

TO-236AB

Terminal Form :

Gull wing

Channel Type :

N

Series :

--

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

0.36 W

Reach Compliance Code :

Compliant

Product :

MOSFET Small Signal

Surface Mount :

yes

Number of Terminals :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Height :

950μm

DS Breakdown Voltage-Min :

350 V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Maximum Operating Temperature :

+150 °C

Minimum Operating Temperature :

-55 °C

Power Dissipation :

360mW

Factory Lead Time :

17 Weeks

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

72mA Tj

Qualification :

-

Mounting Type :

Surface Mount

Number of Elements per Chip :

1

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Package Shape :

RECTANGULAR

Product Type :

MOSFET

Transistor Type :

1 N-Channel

Brand :

Microchip Technology

Power Dissipation (Max) :

360mW (Ta)

Turn On Delay Time :

10 ns

RoHS :

Details

Operating Mode :

Depletion Mode

Continuous Drain Current Id :

72mA

Terminal Finish :

Matte Tin (Sn)

Channel Mode :

Depletion

HTS Code :

8541.21.00.95

Transistor Polarity :

N-Channel