DN2470K4-G
- Mfr.Part #
- DN2470K4-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 170MA TO252
- Stock
- 58,387
- In Stock :
- 58,387
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.5W Ta
- Power Dissipation (Max) :
- 2.5W (Ta)
- Turn-Off Delay Time :
- 45 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Channel Mode :
- Depletion
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Tj
- Number of Elements :
- 1
- Turn On Delay Time :
- 30 ns
- Type :
- FET
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- FET Feature :
- Depletion Mode
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 700 V
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 25V
- Lead Free :
- Lead Free
- Configuration :
- Single
- Surface Mount :
- yes
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 14 Weeks
- Qualification Status :
- Not Qualified
- MSL :
- MSL 1 - Unlimited
- Qualification :
- -
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 700V
- Width :
- 6.1mm
- Operating Mode :
- Depletion Mode
- JEDEC-95 Code :
- TO-252AA
- Mount :
- Surface Mount
- Rise Time :
- 45ns
- Manufacturer :
- Microchip
- Supplier Device Package :
- TO-252, (D-Pak)
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Power Dissipation-Max (Abs) :
- 2.5 W
- Drain to Source Breakdown Voltage :
- 700V
- Height :
- 2.5146mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- N-Channel
- Drain-source On Resistance-Max :
- 42 Ω
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Weight :
- 3.949996g
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- --
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- 1 N-Channel
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Series :
- --
- Channel Type :
- N
- Mounting Type :
- Surface Mount
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 6.73mm
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Base Product Number :
- DN2470
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Product Status :
- Active
- Power Dissipation :
- 2.5W
- RoHS :
- Details
- Minimum Operating Temperature :
- - 55 C
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 42 Ω @ 100mA, 0V
- Continuous Drain Current (ID) :
- 170mA
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current Id :
- 170
- JESD-30 Code :
- R-PSSO-G2
- Brand :
- Microchip Technology / Atmel
- Published :
- 2013
- Element Configuration :
- Single
- Fall Time (Typ) :
- 60 ns
- Base Part Number :
- DN2470
- Number of Terminals :
- 2
- Datasheets
- DN2470K4-G
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N-Channel Tape & Reel (TR) 42 Ω @ 100mA, 0V ±20V 540pF @ 25V 700V TO-252-3, DPak (2 Leads + Tab), SC-63
DN2470K4-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 540pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 170mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 700V, and this device has a drainage-to-source breakdown voltage of 700VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 0.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 700 V.For this transistor to work, a voltage 700V is required between drain and source (Vdss).Using drive voltage (0V), this device contributes to a reduction in overall power consumption.
DN2470K4-G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 0.5A.
a 700V drain to source voltage (Vdss)
DN2470K4-G Applications
There are a lot of Microchip Technology
DN2470K4-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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