DN2450K4-G

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Mfr.Part #
DN2450K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 350MA TO252
Stock
27
In Stock :
27

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
500V
Turn On Delay Time :
15 ns
Drain Current-Max (Abs) (ID) :
0.35 A
Fall Time (Typ) :
15 ns
Drain-source On Resistance-Max :
10 Ω
Factory Lead Time :
10 Weeks
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Drain to Source Breakdown Voltage :
500V
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
--
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
JEDEC-95 Code :
TO-252AA
JESD-609 Code :
e3
Channel Type :
N
Rise Time :
20ns
Pulsed Drain Current-Max (IDM) :
1A
Number of Pins :
3
HTS Code :
8541.90.00.00
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Terminal Finish :
MATTE TIN
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Number of Elements :
1
Power Dissipation :
2.5W
Drive Voltage (Max Rds On,Min Rds On) :
0V
Product Status :
Active
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Continuous Drain Current Id :
350
Number of Channels :
1 Channel
Mount :
Surface Mount
Contact Plating :
Tin
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity :
N-Channel
Number of Terminals :
2
Surface Mount :
yes
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
Supplier Device Package :
TO-252, (D-Pak)
Rds On (Max) @ Id, Vgs :
10 Ω @ 300mA, 0V
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Base Product Number :
DN2450
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
FET Feature :
Depletion Mode
Power Dissipation-Max (Abs) :
2.5 W
Operating Mode :
Depletion Mode
FET Type :
N-Channel
Continuous Drain Current (ID) :
350mA
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
REACH SVHC :
No SVHC
Power Dissipation (Max) :
2.5W (Ta)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Channel Mode :
Depletion
Series :
--
RoHS :
Details
Manufacturer :
Microchip
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
SMD/SMT
Brand :
Microchip Technology
Published :
2009
JESD-30 Code :
R-PSSO-G2
Weight :
3.949996g
Additional Feature :
LOW THRESHOLD
Terminal Position :
Single
Turn-Off Delay Time :
15 ns
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Power Dissipation-Max :
2.5W Ta
Datasheets
DN2450K4-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2450K4-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, DN2450K4-G pinout, DN2450K4-G datasheet PDF, DN2450K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2450K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2450K4-G


N-Channel Tape & Reel (TR) 10 Ω @ 300mA, 0V ±20V 200pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

DN2450K4-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350mA amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).

DN2450K4-G Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 1A.
a 500V drain to source voltage (Vdss)


DN2450K4-G Applications


There are a lot of Microchip Technology
DN2450K4-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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