DN2450K4-G
- Mfr.Part #
- DN2450K4-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 350MA TO252
- Stock
- 27
- In Stock :
- 27
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 500V
- Turn On Delay Time :
- 15 ns
- Drain Current-Max (Abs) (ID) :
- 0.35 A
- Fall Time (Typ) :
- 15 ns
- Drain-source On Resistance-Max :
- 10 Ω
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- JEDEC-95 Code :
- TO-252AA
- JESD-609 Code :
- e3
- Channel Type :
- N
- Rise Time :
- 20ns
- Pulsed Drain Current-Max (IDM) :
- 1A
- Number of Pins :
- 3
- HTS Code :
- 8541.90.00.00
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- MATTE TIN
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Power Dissipation :
- 2.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Continuous Drain Current Id :
- 350
- Number of Channels :
- 1 Channel
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 2
- Surface Mount :
- yes
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Supplier Device Package :
- TO-252, (D-Pak)
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 300mA, 0V
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tj
- Base Product Number :
- DN2450
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- FET Feature :
- Depletion Mode
- Power Dissipation-Max (Abs) :
- 2.5 W
- Operating Mode :
- Depletion Mode
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 350mA
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Power Dissipation (Max) :
- 2.5W (Ta)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Channel Mode :
- Depletion
- Series :
- --
- RoHS :
- Details
- Manufacturer :
- Microchip
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- SMD/SMT
- Brand :
- Microchip Technology
- Published :
- 2009
- JESD-30 Code :
- R-PSSO-G2
- Weight :
- 3.949996g
- Additional Feature :
- LOW THRESHOLD
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 15 ns
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 2.5W Ta
- Datasheets
- DN2450K4-G
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N-Channel Tape & Reel (TR) 10 Ω @ 300mA, 0V ±20V 200pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
DN2450K4-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350mA amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).
DN2450K4-G Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 1A.
a 500V drain to source voltage (Vdss)
DN2450K4-G Applications
There are a lot of Microchip Technology
DN2450K4-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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