DMTH6002LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Reach Compliance Code :

not_compliant

Reference Standard :

AEC-Q101

Gate Charge (Qg) (Max) @ Vgs :

130.8nC @ 10V

Number of Terminations :

5

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

2m Ω @ 50A, 10V

Package / Case :

8-PowerTDFN

Drain Current-Max (Abs) (ID) :

100A

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

200A

Drain-source On Resistance-Max :

0.003Ohm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

294 mJ

Mounting Type :

Surface Mount

Terminal Position :

Dual

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Elements :

1

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

6555pF @ 30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Vgs (Max) :

±20V

Power Dissipation-Max :

167W