DMTH43M8LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

87 mJ

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

2

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Power Dissipation-Max :

88W Ta

Factory Lead Time :

19 Weeks

Transistor Element Material :

SILICON

Surface Mount :

yes

Reference Standard :

AEC-Q101

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

17.6A

ECCN Code :

EAR99

Additional Feature :

High Reliability

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

150A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

38.5nC @ 10V

Drain-source On Resistance-Max :

0.0036Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2693pF @ 20V