DMT69M5LH3

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

28.4 nC @ 10 V

Brand :

Diodes Incorporated

Supplier Device Package :

TO-251

Package :

Tube

Channel Type :

N

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Product Type :

MOSFET

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Package / Case :

TO-251-3 Stub Leads, IPak

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 20A, 10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Mounting Type :

Through Hole

Manufacturer :

Diodes Incorporated

Package Type :

IPAK (TO-251)

Power Dissipation (Max) :

3.3W (Ta), 96W (Tc)

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

1406 pF @ 30 V

Pin Count :

3

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

75A (Tc)

Packaging :

Tube

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)