DMT6005LCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

47.1nC @ 10V

Reach Compliance Code :

not_compliant

Terminal Position :

Single

DS Breakdown Voltage-Min :

60V

Factory Lead Time :

20 Weeks

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Power Dissipation-Max :

2.3W Ta 104W Tc

Pulsed Drain Current-Max (IDM) :

130A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2962pF @ 30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.006Ohm

Additional Feature :

High Reliability

Published :

2016

Transistor Element Material :

SILICON

FET Type :

N-Channel

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

6m Ω @ 20A, 10V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101

Avalanche Energy Rating (Eas) :

43.5 mJ

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ