DMT6010LFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Capacitance :

2.09nF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 20A, 10V

Number of Channels :

1

Weight :

72.007789mg

Factory Lead Time :

23 Weeks

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

23.4 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

41.3nC @ 10V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

4.3ns

JESD-609 Code :

e3

Package / Case :

8-PowerVDFN

FET Type :

N-Channel

Fall Time (Typ) :

9.7 ns

ECCN Code :

EAR99

Number of Pins :

8

Published :

2016

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn On Delay Time :

5.7 ns

Current - Continuous Drain (Id) @ 25°C :

13A Ta 30A Tc

Power Dissipation-Max :

2.2W Ta 41W Tc

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2090pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

30A