DMT2005UDV-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

46.7nC @ 10V

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

7m Ω @ 14A, 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 10V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Factory Lead Time :

22 Weeks

FET Type :

2 N-Channel (Dual)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Power - Max :

900mW Ta

Drain to Source Voltage (Vdss) :

24V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard