DMN5L06T-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

150mW Ta

Package / Case :

SOT-523

Gate to Source Voltage (Vgs) :

20V

Published :

2007

Terminal Form :

Gull wing

Terminal Position :

Dual

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.7V

Feedback Cap-Max (Crss) :

5 pF

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

280mA Ta

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

ECCN Code :

EAR99

Power Dissipation :

150mW

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Additional Feature :

LOW CAPACITANCE

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3 Ω @ 200mA, 2.7V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Continuous Drain Current (ID) :

280mA

Pin Count :

3

Drain-source On Resistance-Max :

3Ohm

Radiation Hardening :

No

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.28A

Drain to Source Breakdown Voltage :

50V

Operating Temperature :

-55°C~150°C TJ