DMN55D0UT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Package / Case :

SOT-523

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Published :

2012

Width :

800μm

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

4Ohm

Power Dissipation :

200mW

Factory Lead Time :

18 Weeks

Number of Pins :

3

Length :

1.6mm

JESD-609 Code :

e3

Element Configuration :

Single

Threshold Voltage :

800mV

Number of Terminations :

3

REACH SVHC :

No SVHC

Height :

750μm

Power Dissipation-Max :

200mW Ta

Continuous Drain Current (ID) :

160mA

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

160mA Ta

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

4 Ω @ 100mA, 4V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

50V

Gate to Source Voltage (Vgs) :

12V

Lead Free :

Lead Free

Weight :

7.994566mg

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V